feb.1999 mitsubishi transistor modules QM600HD-M high power switching use non-insulated type outline drawing & circuit diagram dimensions in mm application robotics, forklifts, welders QM600HD-M ? i c collector current ........................ 600a ? v cex collector-emitter voltage ........... 350v ? h fe dc current gain............................. 500 ? non-insulated type 94 80 f 5.5 62 48 17 8 25 22 12 14 20 22 e b e bx 64 m4 m6 27 25 21 5.5 8 b bx e e c label
feb.1999 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m6 mounting screw m5 b(e) terminal screw m4 bx terminal screw m4 typical value ratings 350 350 400 10 600 2080 15 C40~+150 C40~+125 1.96~2.94 20~30 1.47~1.96 15~20 0.98~1.47 10~15 0.98~1.47 10~15 420 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g mitsubishi transistor modules QM600HD-M high power switching use non-insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 500 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =350v, v eb =2v v cb =400v, emitter open v eb =10v i c =600a, i b =1.2a Ci c =600a (diode forward voltage) i c =600a, v ce =2v v cc =200v, i c =600a, i b1 =2a, Ci b2 =4a transistor part diode part conductive grease applied typ. max. 2.0 2.0 800 2.0 2.5 3.0 15 3.0 0.06 0.05
feb.1999 4 10 3 10 2 10 1 10 2 10 1 10 0 10 1 10 0 10 ? 10 0 012345 1.0a 0.4a 0.2a 0.08a 200 400 600 800 1000 t j =25? i b =2.0a 7 5 4 3 2 7 5 4 3 2 1.2 1.4 1.6 1.8 2.0 2.2 v ce =2.0v t j =25? 0 10 ? 10 ? 10 7 5 4 3 2 7 5 4 3 2 2345 7 23457 4 10 3 10 2 10 1 10 2 10 3 10 v ce =2.0v t j =25? t j =125? 7 5 4 3 2 7 5 4 3 2 23457 23457 1 10 0 10 1 10 2 10 3 10 ? 10 t j =25? t j =125? i b =1.2a v ce(sat) v be(sat) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t j =25? t j =125? t f t s t on i b1 =2.0a v cc =200v ? b2 =4.0a 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 ? 10 ? 10 444 t j =25? t j =125? i c =600a i c =400a i c =200a performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM600HD-M high power switching use non-insulated type
feb.1999 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? 2 10 3 10 1 10 0 10 4 10 3 10 2 10 1 10 444 1ms 10ms dc t w =100 ? 0 10 1 10 7 5 4 3 2 0 10 7 5 4 3 3457 2 3457 1 10 2 23 t f 3 v cc =200v t j =25? t j =125? i b1 =2a i c =600a t s 2000 1600 1200 0 0 100 200 300 400 500 t j =125? ? b2 =4a 6a 1800 1400 1000 800 600 200 400 7 5 3 2 7 5 3 2 7 5 3 2 0.08 0 7 5 3 2 1 10 0 10 0 10 ? 10 ? 10 ? 10 444 0.07 0.06 0.05 0.04 0.03 0.02 0.01 3 2 4 non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) transient thermal impedance characteristic (transistor) time (s) collector current i c (a) collector current i c (a) derating factor (%) mitsubishi transistor modules QM600HD-M high power switching use non-insulated type z th (jCc) ( c/ w)
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